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| | | | | | Suitable for some meso-scale (material thickness up to 1 mm) and lots of micro-scale applications | | Case study focused on micro-scale application |
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| | | Hard Disk Texturing
| | Nd:Vanadate IR laser, 4 W, 200 kHz, 80 ns | |
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| | | Solar Cell Scribing
| | | | Nd:YAG IR laser, scan head, 360 in/min, 9 W, 6 kHz. |
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| | | | | | Nd:YAG Green laser, xy table, 360 in/min, 0.3-0.5 W, 25 kHz |
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| | | ITO Scribing for Flat Panel Display (FPD)
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| | | Film Scribing
| | Nd:YAG green laser, CrNiAu coating on Zr:Oxide ceramic-substrate, 1µm coating, 2.5 mm substrate, required scribe line width 10 µm, average power 0.5 W, 30 kHz. | |
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| | | Diamond Cutting/Drilling/Structuring
| | Nd:YAG green laser, average power: 9.0 W, pulse width: 150 ns
Cycle time: ~ 90 seconds/piece | |
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| | | Machining Dielectric Materials - Sapphire
| | Laser sapphire parts, Nd:YAG green laser, 9.0 W, 150 ns pulse width
Cycle time: 138 sec for ID and 430 s for OD, and 568 s per piece | |
| | | | |  | | Exit hole |
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| | | Machining Dielectric Materials - Alumina
| | Percussion drilling with Nd:YAG green laser, as-drilled hole array, 10 mil thick 99% alumina sheet, 11.0 W, 50 ms/hole | |
| | |  | | Entry side |
| | |  | | Exit side |
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| | | Lead Frame Separation
| | Nd:YAG green laser, average power: 9.0 W, pulse width: 150 ns | |
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| | | Silicon Slotting/Scribing
| | Nd:YAG green laser, average power: 11 W, pulse width: 13 ns, pulse repetition rate: 50 kHz, slot width: 200 µm | |
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| | | Silicon Scribing
| | QS Nd:YAG UV (355 nm) laser | |
| Processing: Scribe on the die street to remove 8 micron thick glass layer | |
| Scribing speed = 100 mm/s | |
| Results: HAZ was minimized; no damage to the adjacent die. | |
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| | | 3D Marking inside Glass
| | QS Nd:YAG UV (355 nm) laser | |
| Proper absorption and focusing depth | |
| Programmable Z movement | |
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| | | Wire Stripping
| | Q-switched Nd:YAG, DUV (266 nm), pulse width: 5 ns, pulse repetition rate: 10 Hz, cut width: 20 µm, cut depth: <10 µm | |
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